Optically Activated Transistor, Switch, and Photodiode
AssigneeBoise State University
InventorKRISTY A. CAMPBELL
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Abstract
An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.
Claims22
An optically activated device comprising:
- an active material on a substrate;
- a first electrode electrically connected to the active material;
- and
- a second electrode electrically connected to the active material, wherein the active material conducts current bidirectionally in the presence of light and wherein the active material does not conduct appreciable current in the absence of light.
A method of providing an optically activated device comprising:
- forming a first layer by depositing germanium selenide (GeSe) onto a substrate;
- forming a second layer by depositing GeSe and an element onto the first layer;
- forming a third layer by depositing GeSe onto the second layer;
- forming a fourth layer by depositing GeSe and the element onto the fourth layer;
- and
- forming a fifth layer by depositing GeSe onto the fourth layer.
An optically activated device comprising:
- a p-type silicon substrate comprising a native oxide layer;
- a first layer comprising germanium selenide (GeSe) deposited on the p-type silicon substrate;
- a second layer comprising GeSe and an element deposited on the first layer;
- a third layer comprising GeSe deposited on the second layer;
- a fourth layer comprising GeSe and the element deposited on the third layer;
- a fifth layer comprising GeSe deposited on the fourth layer;
- a first electrode in contact with the fifth layer;
- and
- a second electrode in contact with the fifth layer, wherein the combination of the substrate, the first layer, the second layer, the third layer, the fourth layer, and the fifth layer conducts current between the first electrode and the second electrode in the presence of light and does not conduct appreciable current in the absence of light, and wherein no more than two electrodes are in contact with the fifth layer.
Dependencies are inferred from the claim text.