Semiconductor device and a method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsMasao INOUE, Masaru KADOSHIMA, Yoshiyuki KAWASHIMA, Ichiro YAMAKAWA
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Abstract
A memory cell, which is a nonvolatile memory cell, includes a gate dielectric film having charge storage layer capable of holding charges, and a memory gate electrode formed on the gate dielectric film. The charge storage layer includes an insulating film containing hafnium, silicon, and oxygen, an insertion layer formed on the insulating film and containing aluminum, and an insulating film formed on the insertion layer and containing hafnium, silicon, and oxygen.
Claims20
A semiconductor device, comprising:
- a nonvolatile memory cell having:
- a first gate dielectric film formed on a semiconductor substrate and including a charge storage layer capable of holding charges;
- and
- a first gate electrode formed on the first gate dielectric film,
- wherein the charge storage layer includes:
- a first insulating film formed on the semiconductor substrate and containing hafnium, silicon and oxygen,
- a first insertion layer formed on the first insulating film and containing aluminum, and
- a second insulating film formed on the first insertion layer and containing hafnium, silicon and oxygen.
A semiconductor device, comprising:
- a nonvolatile memory cell having a charge storage layer capable of holding charges,
- wherein the charge storage layer includes a first insulating film containing hafnium, silicon and oxygen, and
- wherein at least one layer of an insertion layer containing a metal different from hafnium is formed in the first insulating film.
A method of manufacturing a semiconductor device, comprising:
- (a) forming a first gate dielectric film including a charge storage layer capable of holding charges on a semiconductor substrate;
- and
- (b) forming a first gate electrode on the first gate insulating film;
- wherein, in the (a), the forming the charge storage layer includes:
- (a1) forming a first insulating film containing hafnium, silicon and oxygen on the semiconductor substrate;
- (a2) forming a first insertion layer containing aluminum on the first insulating film;
- and
- (a3) forming a second insulating film containing hafnium, silicon and oxygen on the first insertion layer.
Dependencies are inferred from the claim text.