Oxide semiconductor thin-film and thin-film transistor consisted thereof
AssigneeSouth China University of Technology
InventorsMIAO XU, HUA Xu, WEIJING Wu, WEIFENG CHEN, LEI WANG, JUNBIAO PENG
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Abstract
The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.
Claims18
An oxide semiconductor thin-film characterizes in that the oxide semiconductor thin-film is fabricated from (MO)x(RO)y semiconductor material by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor, in where, 0.8≤x≤1, 0.0001≤y≤0.2, x+y=1;
- the M in the metal oxide semiconductor is one element selected from In, Zn, Ga, Sn, Si, Al, Mg, Zr, Hf or Ta, or any arbitrary combination of two or more,
- the R in the rare-earth oxide is one element selected from Pr, Tb Dy, Yb, or any arbitrary combination of two or more.
A thin-film transistor characterizes in that comprising a channel layer which is consisted by an oxide semiconductor thin-film that is fabricated from (MO)x(RO)y semiconductor material by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor, in where, 0.8≤x≤1, 0.0001≤y≤0.2, x+y=1;
- the M in the metal oxide semiconductor is one element selected from In, Zn, Ga, Sn, Si, Al, Mg, Zr, Hf or Ta, or any arbitrary combination of two or more;
- the R in the rare-earth oxide is one element selected from Pr, Tb, Dy, Yb, or any arbitrary combination of two or more.
Dependencies are inferred from the claim text.