Semiconductor devices comprising channel materials
AssigneeMicron Technology, Inc.
InventorGurtej S. Sandhu
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Abstract
A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region between a first side and second side of the mesa. A first gate is on a first side of the mesa, the first gate comprising a first gate insulator and a first gate conductor comprising graphene overlying the first gate insulator. The gate conductor may comprise graphene in one or more monolayers. Also disclosed are a method for fabricating the semiconductor device structure; an array of vertical transistor devices, including semiconductor devices having the structure disclosed; and a method for fabricating the array of vertical transistor devices.
Claims22
A semiconductor device, comprising:
- a channel material comprising indium gallium zinc oxide (IGZO) adjacent to a material;
- an insulator material adjacent to opposing sides of the channel material;
- and
- a conductor material adjacent to the insulator material, the conductor material coextensive with and in direct contact with a height and a width of the insulator material.
A semiconductor device, comprising:
- a channel region comprising indium gallium zinc oxide (IGZO) adjacent to a material;
- an insulator material in contact with an entire height and an entire width of the channel region;
- and
- a conductor material in contact with an entire height and an entire width of the insulator material, a thickness of the conductor material less than a thickness of the insulator material.
A semiconductor device, comprising:
- an array of mesas, the array comprising:
- mesas comprising an indium gallium zinc oxide (IGZO) material adjacent to a material;
- first insulative materials in direct contact with an entire height and an entire width of the mesas;
- and
- conductor materials in direct contact with an entire height and an entire width of the first insulative materials, the conductor materials separated from the mesas.
A semiconductor device, comprising:
- a channel material comprising indium gallium zinc oxide (IGZO) adjacent to a material;
- an insulator material in contact with an entire height and an entire width of one or more sides of the channel material;
- and
- a conductor material in contact with an entire height and an entire width of the insulator material, a thickness of the conductor material less than a thickness of the insulator material.
Dependencies are inferred from the claim text.