Radiation hardened thin-film transistors

A system, comprising:

• a voltage source for applying a voltage;
• a thin-film transistor having an annealed layer comprising crystalline zinc oxide;
• and
• a passivation layer adjacent to the thin-film transistor, wherein the passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer, and wherein the annealed layer has a thickness and threshold displacement energies after it has been annealed such that:
• a) a difference between a transfer characteristic value of the thin-film transistor before the dose and the transfer characteristic value after the dose is less than a first threshold;
• and
• b) a difference between a transistor output characteristic value of the thin-film before the dose and the transistor output characteristic value after the dose is less than a second threshold;
• and wherein the first threshold and second threshold are based on a desired performance of the thin-film transistor when the voltage is applied.