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US 2020/0027988 A1Published application
Structure and formation method of semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin
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Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure. The gate stack includes a first portion and a second portion adjacent to the fin structure, and the first portion is wider than the second portion.
Claims20
A device comprising:
- a fin structure disposed over a substrate, the fin structure extending along a first direction;
- a gate stack disposed over the fin structure, wherein the gate stack includes a first portion and a second portion extending along a second direction adjacent to the fin structure, the second direction being perpendicular to the first direction, wherein the first portion is wider than the second portion, wherein the second portion of the gate stack includes a sidewall surface extending towards the fin structure at a third direction, the third direction being different than the first direction and the second direction;
- and
- a source/drain feature disposed on the fin structure.
1 more element
A device comprising:
- a fin structure disposed over a semiconductor substrate;
- a gate stack disposed over the fin structure, the gate stack including:
- a gate dielectric disposed over the fin structure;
- a gate electrode disposed over the gate dielectric, the gate electrode having a sidewall that interfaces with the gate dielectric at an acute angle.
1 more element
A device comprising:
- a fin structure disposed over a semiconductor substrate;
- and
- a gate stack disposed over a portion of the fin structure;
- wherein the gate stack includes a first portion and a second portion, the second portion is between the first portion and the fin structure, and the second portion becomes narrower along a direction towards the portion of the fin structure.
1 more element
Dependencies are inferred from the claim text.