Semiconductor devices including electrically conductive contacts and related systems and methods

A semiconductor device, comprising:

• a semiconductor structure;
• a first insulating material over the semiconductor structure, the first insulating material comprising a first aperture and a second aperture;
• a conductive material filling the first aperture;
• a second insulating material filling the second aperture, the second insulating material having a different material composition than the first insulating material;
• and
• conductive contacts over the second insulative material and over the conductive material, the conductive contacts over the conductive material separated from the conductive material by a silicide material.

A method of forming a semiconductor device, the method comprising:

• forming openings in a first electrically insulative material;
• filling the openings with a second electrically insulative material;
• removing portions of the second electrically insulative material to recess upper surfaces of the second electrically insulative material relative to upper surfaces of the first electrically insulative material;
• oxidizing exposed surfaces of the first electrically insulative material;
• forming a mask material on the oxidized surfaces of the first electrically insulative material in a dummy region of the semiconductor device;
• removing the second electrically insulative material from an array region of the semiconductor device;
• removing the mask material;
• and
• forming an electrically conductive material over the semiconductor device.

A system comprising:

• at least one processor device operably coupled to at least one input device and at least one output device;
• a semiconductor device operably coupled to the at least one processor device, the semiconductor device comprising:
• pillars of a first electrically insulative material extending from a base structure;
• an electrically conductive material between adjacent pillars of the first electrically insulative material in an array region;
• a second electrically insulative material between adjacent pillars of the first electrically insulative material in a dummy region;
• another electrically conductive material over the electrically conductive material in the array region and over the second electrically insulative material in the dummy region;
• an oxide between the electrically conductive material and the second electrically insulative material;
• and
• memory storage elements in communication with the another electrically conductive material in the array region and in dummy region.