Semiconductor device
AssigneeSanken Electric Co., Ltd.
InventorHironori AOKI
Life of this patent
Estimating the term…
Abstract
Provided is a low cost semiconductor device in which occurrence of chipping and a crack during dicing is suppressed. A nitride layer (silicon nitride layer) 23 is formed on an oxide layer 22. In FIG. 1, a thick organic layer 24 is formed as a top layer. The semiconductor device 1 is characterized by its structure on a side of its end portion. In FIG. 1, the end portion E of the semiconductor device 1 is formed by cutting with a blade in the vertical direction during dicing. An edge E1 of both the oxide layer 22 and the nitride layer is located apart from an edge of a semiconductor substrate 10. An edge E2 of the organic layer 24 on the nitride layer 23 is located inside the edge E1 of the nitride layer 23 (on a side more distant from the edge E).
Claims10
(canceled)
A semiconductor device having a protective layer formed on a semiconductor substrate, the protective layer including a silicon nitride layer and an organic film layer in a stack structure,
- wherein:
- the organic film layer is formed on the silicon nitride layer, with a larger thickness than that of the silicon nitride layer;
- the organic film layer is formed such that, in a plan view, an edge of the organic film layer is located inside an area in which the silicon nitride layer is formed, on the semiconductor substrate;
- and
- a distance between the edge of the organic film layer and an edge of the silicon nitride layer, in a plan view, is set to be no smaller than 10 μm and no larger than 200 μm.
A semiconductor device having a protective layer formed on a semiconductor substrate, the protective layer including a silicon nitride layer and an organic film layer in a stack structure,
- wherein:
- the organic film layer is formed on the silicon nitride layer, with a larger thickness than that of the silicon nitride layer;
- and
- the organic film layer is formed such that, in a plan view, an edge of the organic film layer is located inside an area in which the silicon nitride layer is formed, on the semiconductor substrate;
- and
- on a side which is opposite, with reference to the edge of the silicon nitride layer in a plan view, to a side where the edge of the semiconductor substrate is located, a trench extending along an end portion of the silicon nitride layer and dug down from the top surface of the semiconductor substrate is formed in the semiconductor substrate.
Dependencies are inferred from the claim text.