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US 2020/0027973 A1Published application
Integrated circuit heat dissipation using nanostructures
AssigneeInternational Business Machines Corporation
InventorsAlan B. BOTULA, Max L. LIFSON, James A. SLINKMAN, Theodore G. VAN KESSEL, Randy L. WOLF
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Abstract
An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature of an integrated circuit device. The method also includes forming an electrically conductive layer on the isolation layer. The method additionally includes forming a plurality of nanowire structures on a surface of the electrically conductive layer
Claims19
A transistor, comprising:
- a collector region;
- a base region;
- an emitter region, each of the collector region, the base region and the emitter region located over a substrate;
- a plurality of nanowire structures above a first portion of the base region;
- and
- a collector electrical contact over a portion of the substrate adjacent to a portion of the base region, wherein the portion of the base region is located between the first portion of the base region in which the nanowire structures are formed on and the portion of the substrate which the collector electrical contact is formed over.
3 more elements
Dependencies are inferred from the claim text.