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US 2020/0027970 A1Published application
FinFETs having Epitaxial Capping Layer on Fin and Methods for Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Hua Yu, Chih-Pin Tsao, Hou-Yu Chen
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Abstract
A FinFET and methods for forming a FinFET are disclosed. A method includes forming a semiconductor fin on a substrate, implanting the semiconductor fin with dopants, and forming a capping layer on a top surface and sidewalls of the semiconductor fin. The method further includes forming a dielectric on the capping layer, and forming a gate electrode on the dielectric.
Claims20
A method comprising:
- implanting dopants into a fin extending from a substrate, the fin being surrounded by an isolation region;
- after the implanting dopants into the fin, etching the isolation region to expose sidewalls of the fin;
- performing a surface treatment process on the exposed sidewalls and a top surface of the fin;
- and
- after performing the surface treatment process, epitaxially growing a capping layer on the top surface and the exposed sidewalls of the fin.
2 more elements
A method comprising:
- forming a fin over a substrate;
- forming an isolation region over the substrate, the isolation region surrounding the fin;
- implanting dopants into the fin;
- after implanting dopants into the fin, etching the isolation region to expose a first portion of the fin;
- treating the first portion of the fin with a dry etch process;
- and
- after treating the first portion of the fin, epitaxially growing a capping layer on a top surface and sidewalls of the first portion of the fin.
4 more elements
A method comprising:
- forming a fin on a substrate;
- forming an isolation region on the substrate, the isolation region surrounding the fin;
- implanting the fin with dopants, the implanting the fin with dopants causing twin plane defects in the fin;
- epitaxially growing a capping layer on a top surface and sidewalls of the fin, the capping layer being grown over the twin plane defects;
- and
- after epitaxially growing the capping layer, forming a gate structure on the capping layer.
3 more elements
Dependencies are inferred from the claim text.