Method for Producing a Semiconductor Component
AssigneeInfineon Technologies AG
InventorsTill Schloesser, Christian Kampen, Andreas Meiser
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Abstract
A method for producing a semiconductor component includes: providing a semiconductor body having a first dopant of a first conductivity type; forming a first trench in the semiconductor body starting from a first side; filling the first trench with a semiconductor filler material; forming a superjunction structure by introducing a second dopant of a second conductivity type into the semiconductor body, the semiconductor filler material being doped with the second dopant; forming a second trench in the semiconductor body starting from the first side; and forming a trench structure in the second trench.
Claims17
A method for producing a semiconductor component, the method comprising:
- providing a semiconductor body having a first dopant of a first conductivity type;
- forming a first trench in the semiconductor body starting from a first side;
- filling the first trench with a semiconductor filler material;
- forming a superjunction structure by introducing a second dopant of a second conductivity type into the semiconductor body, the semiconductor filler material being doped with the second dopant;
- forming a second trench in the semiconductor body starting from the first side;
- and
- forming a trench structure in the second trench.
Dependencies are inferred from the claim text.