Semiconductor device and manufacture thereof

Abstract

A semiconductor device and its manufacturing method are presented. The manufacturing method includes providing a semiconductor structure comprising a substrate, at least one source region on the substrate, an interlayer dielectric layer covering a portion of the source region and having a cavity on the source region, and a pseudo gate insulation layer at the bottom of the cavity covering a portion of the source region; forming a barrier layer in the cavity; forming a loss reduction region in the interlayer dielectric layer by conducting an ion implantation process comprising silicon ion or carbon ion; removing the barrier layer; removing the pseudo gate insulation layer to expose a portion of the source region; and forming a gate structure on the exposed portion of the source region. This inventive concept reduces the loss of the interlayer dielectric layer, thus reduces the height loss of the gate electrode.

Dependencies are inferred from the claim text.