Trench contact structures for advanced integrated circuit structure fabrication

An integrated circuit structure, comprising:

• a fin comprising silicon, the fin having a top and sidewalls;
• a gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin;
• a gate electrode over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the gate electrode having a first side and a second side opposite the first side;
• first and second semiconductor source or drain regions adjacent the first and second sides of the gate electrode, respectively;
• a trench contact structure over one of the first or second semiconductor source or drain regions, the trench contact structure comprising a U-shaped metal layer and a T-shaped metal layer on and over the entirety of the U-shaped metal layer;
• and
• a dielectric material between the gate electrode and the trench contact structure, wherein the dielectric material has a top surface above a top surface of the T-shaped metal layer of the trench contact structure.

A computing device, comprising:

• a board;
• and
• a component coupled to the board, the component including an integrated circuit structure, comprising:
• a fin comprising silicon, the fin having a top and sidewalls;
• a gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin;
• a gate electrode over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin, the gate electrode having a first side and a second side opposite the first side;
• first and second semiconductor source or drain regions adjacent the first and second sides of the gate electrode, respectively;
• a trench contact structure over one of the first or second semiconductor source or drain regions, the trench contact structure comprising a U-shaped metal layer and a T-shaped metal layer on and over the entirety of the U-shaped metal layer;
• and
• a dielectric material between the gate electrode and the trench contact structure, wherein the dielectric material has a top surface above a top surface of the T-shaped metal layer of the trench contact structure.

A nanowire transistor, comprising:

• a nanowire;
• a gate dielectric layer over the nanowire;
• a gate electrode over the gate dielectric layer, the gate electrode having a first side and a second side opposite the first side;
• first and second semiconductor source or drain regions adjacent the first and second sides of the gate electrode, respectively;
• a trench contact structure over one of the first or second semiconductor source or drain regions, the trench contact structure comprising a U-shaped metal layer and a T-shaped metal layer on and over the entirety of the U-shaped metal layer;
• and
• a dielectric material between the gate electrode and the trench contact structure, wherein the dielectric material has a top surface above a top surface of the T-shaped metal layer of the trench contact structure.