Semiconductor Device and Manufacturing Method Thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Sheng Li, Hsin-Chieh Huang, Chi-Wen Liu
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a substrate, at least one active semiconductor fin, at least one first dummy semiconductor fin, and at least one second dummy semiconductor fin. The active semiconductor fin is disposed on the substrate. The first dummy semiconductor fin is disposed on the substrate. The second dummy semiconductor fin is disposed on the substrate and between the active semiconductor fin and the first dummy semiconductor fin. A top surface of the first dummy semiconductor fin and a top surface of the second dummy semiconductor fin are curved in different directions.
Claims20
A semiconductor device comprising:
- a substrate;
- a first active semiconductor fin disposed on the substrate;
- a first dummy semiconductor fin disposed on the substrate, the first dummy semiconductor fin having a first concave upper surface;
- and
- a second dummy semiconductor fin disposed on the substrate, the second dummy semiconductor fin having a second concave upper surface, the first concave upper surface and the second concave upper surface having different curvatures, the second dummy semiconductor fin being disposed between the first active semiconductor fin and the first dummy semiconductor fin, a height of the second dummy semiconductor fin being greater than a height of the first dummy semiconductor fin.
A semiconductor device comprising:
- a substrate;
- a first active semiconductor fin disposed on the substrate;
- a first dummy semiconductor fin disposed on the substrate, the first dummy semiconductor fin having a first convex upper surface;
- and
- a second dummy semiconductor fin disposed on the substrate, the second dummy semiconductor fin having a first concave upper surface, the first dummy semiconductor fin being disposed between the first active semiconductor fin and the second dummy semiconductor fin, a height of the first dummy semiconductor fin being greater than a height of the second dummy semiconductor fin.
A method comprising:
- forming a first active semiconductor fin, a first dummy semiconductor fin, and a second dummy semiconductor fin on a substrate, wherein the first dummy semiconductor fin is disposed between the first active semiconductor fin and the second dummy semiconductor fin;
- etching the first dummy semiconductor fin, a remaining portion of the first dummy semiconductor fin having a first sidewall, the first sidewall having a first height;
- and
- after etching the first dummy semiconductor fin, etching the second dummy semiconductor fin, a remaining portion of the second dummy semiconductor fin having a second sidewall and a third sidewall opposite the second sidewall, the second sidewall having a second height, the third sidewall having a third height, the first height being greater than the second height, the second height being greater than the third height.
Dependencies are inferred from the claim text.