Active matrix substrate and liquid crystal display panel

2:

• The active matrix substrate according to claim 1, wherein the intermediate layer is a silicon oxynitride layer.

3:

• The active matrix substrate according to claim 1, wherein the refractive index nA of the silicon oxide layer, the refractive index nB of the silicon nitride layer, and the refractive index nC of the intermediate layer satisfy a relation 1.13·nA≤nC≤0.93·nB.

4:

• The active matrix substrate according to claim 1, wherein the silicon oxide layer is located between the oxide semiconductor layer and the intermediate layer.

5:

• The active matrix substrate according to claim 1, wherein, of the gate insulating layer and the inorganic insulating layer, the gate insulating layer is the insulating layer stack including the intermediate layer.

6:

• The active matrix substrate according to claim 1, wherein, of the gate insulating layer and the inorganic insulating layer, the inorganic insulating layer is the insulating layer stack including the intermediate layer.

7:

• The active matrix substrate according to claim 1, wherein the gate insulating layer and the inorganic insulating layer are each the insulating layer stack including the intermediate layer.

9:

• The active matrix substrate according to claim 8, wherein the second layer is a silicon oxynitride layer.

10:

• The active matrix substrate according to claim 8, wherein the first layer is located between the oxide semiconductor layer and the second layer.

11:

• The active matrix substrate according to claim 8, wherein, of the gate insulating layer and the inorganic insulating layer, the gate insulating layer is the insulating layer stack.

12:

• The active matrix substrate according to claim 8, wherein, of the gate insulating layer and the inorganic insulating layer, the inorganic insulating layer is the insulating layer stack.

13:

• The active matrix substrate according to claim 8, wherein the gate insulating layer and the inorganic insulating layer are each the insulating layer stack.

14:

• The active matrix substrate according to claim 1, wherein the oxide semiconductor layer contains an In—Ga—Zn—O-based semiconductor.

15:

• The active matrix substrate according to claim 14, wherein the In—Ga—Zn—O-based semiconductor has a crystalline portion.