Schottky diode with high breakdown voltage and surge current capability using double p-type epitaxial layers

A Silicon Carbide (SiC) Schottky diode comprising:

• a substrate of a first conductivity type;
• an ohmic contact metal deposited on a backside of the substrate;
• a first epitaxial layer of the first conductivity layer deposited on top of the substrate;
• a second epitaxial layer of a second conductivity type deposited on top of the first epitaxial layer;
• a third epitaxial layer of the second conductivity type deposited on top of the second epitaxial layer;
• a plurality of trenches formed by etching the second and third epitaxial layers;
• a first electrode in contact with an upper surface of the third epitaxial layer;
• a second electrode deposited at a bottom portion of the trench, forming a Schottky junction between the second electrode and the first epitaxial layer;
• and
• a third electrode used as an anode electrode formed on top of the second electrode.