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US 2020/0027950 A1Published application
Semiconductor device, method of manufacturing the same and electronic device including the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsHuilong ZHU, Guilei WANG, Henry H. RADAMSON, Yanbo ZHANG, Zhengyong ZHU
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Abstract
A semiconductor device including a substrate, a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, and a gate stack surrounding a periphery of the channel layer. The channel layer includes a semiconductor material causing an increased ON current and/or a reduced OFF current as compared to Si.
Claims34
A semiconductor device, comprising:
- a substrate;
- a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, wherein the channel layer comprises a semiconductor material causing an increased ON current and/or a reduced OFF current as compared to Si;
- and
- a gate stack surrounding a periphery of the channel layer.
1 more element
A method of manufacturing a semiconductor device, comprising:
- epitaxially growing a first source/drain layer on a substrate;
- epitaxially growing a channel layer on the first source/drain layer, wherein the channel layer comprises a semiconductor material causing an increased ON current and/or a reduced OFF current as compared to Si;
- epitaxially growing a second source/drain layer on the channel layer;
- defining an active region for the semiconductor device in the first source/drain layer, the channel layer, and the second source/drain layer;
- and
- forming a gate stack around a periphery of the channel layer.
3 more elements
Dependencies are inferred from the claim text.