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US 2020/0027896 A1Published application
Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorDae Sung EOM
Life of this patent
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Abstract
A semiconductor device includes conductive patterns stacked and spaced apart from each other in a first direction to form a stepped structure, a stepped insulating layer overlapping the stepped structure, contact plugs extending through the stepped insulating layer in the first direction to contact respective contact portions of the conductive patterns, and barrier patterns disposed on sidewalls of the stepped insulating layer.
Claims20
A semiconductor device, comprising:
- conductive patterns, wherein the conductive patterns are stacked and spaced apart from each other in a first direction to form a stepped structure;
- a stepped insulating layer overlapping the stepped structure;
- contact plugs extending through the stepped insulating layer in the first direction to contact respective contact portions of the conductive patterns exposed by the stepped structure;
- and
- barrier patterns disposed on sidewalls of the stepped insulating layer.
2 more elements
A semiconductor device, comprising:
- a conductive pattern including a contact portion, wherein the conductive pattern extends in a horizontal direction;
- a first barrier pattern disposed at a first level above the conductive pattern;
- a second barrier pattern disposed at a second level, lower than the first level, above the conductive pattern, wherein the second barrier pattern is spaced apart from the first barrier pattern in the horizontal direction;
- and
- a contact plug disposed between the first barrier pattern and the second barrier pattern, wherein the contact plug extends in a vertical direction to contact the contact portion.
2 more elements
Dependencies are inferred from the claim text.