Semiconductor device and method of manufacturing the same

A semiconductor device including:

• a memory formed in a memory cell area of a substrate;
• a logic circuit formed in a logic circuit area of the substrate;
• a first ring structure surrounding the memory cell area and separating the memory cell area from the logic circuit area;
• and
• an interlayer dielectric (ILD) layer disposed over the first ring structure, wherein:
• the first ring structure includes:
• a first frame shaped poly silicon layer;
• a first dielectric layer disposed between the first frame shaped poly silicon layer and the substrate;
• and
• first sidewall spacers formed on sides of the first frame shaped poly silicon layer, and
• the first dielectric layer is physically separated from the ILD layer by the first sidewall spacers.

A semiconductor device including:

• a logic circuit formed in a logic circuit area of a substrate;
• a ring structure surrounding the logic circuit area;
• and
• an interlayer dielectric (ILD) layer disposed over the ring structure, wherein:
• the ring structure includes:
• a frame shaped poly silicon layer;
• a dielectric layer disposed between the frame shaped poly silicon layer and the substrate;
• and
• sidewall spacers formed on sides of the frame shaped poly silicon layer, and the dielectric layer is physically separated from the ILD layer by the sidewall spacers.