Semiconductor device
AssigneeSK hynix Inc.
InventorKi Hong LEE
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include a source layer, a stack structure, a channel layer, a slit, and a source pick-up line. The source layer may include at least one groove in an upper surface thereof. The stack structure may be formed over the source layer. The channel layer may pass through the stack structure. The channel layer may be in contact with the source layer. The slit may pass through the stack structure. The slit may expose the groove of the source layer therethrough. The source pick-up line may be formed in the slit and the groove. The source pick-up line may be contacted with the source layer.
Claims19
A semiconductor device comprising:
- a source layer including at least one groove in an upper surface thereof;
- a stack structure formed on the source layer;
- a channel layer passing through the stack structure, the channel layer being in contact with the source layer;
- a slit passing through the stack structure, the slit exposing the groove of the source layer therethrough;
- and
- a slit insulating layer being in contact with the source layer and formed in the slit and the groove.
A semiconductor device comprising:
- a source layer including a groove in an upper surface thereof;
- a stack structure formed over the source layer and including conductive layers and insulating layers that are alternately stacked;
- a channel layer passing through the stack structure, the channel layer being in contact with the source layer;
- and
- a slit insulating layer including a first portion formed in the groove and a second portion passing through the stack structure, wherein the second portion has a narrower width than the first portion.
Dependencies are inferred from the claim text.