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US 2020/0027885 A1Published application
Semiconductor device having a gate and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDongjin Lee, Ji-Eun Lee, Kyoung-Ho Jung, Satoru Yamada, Moonyoung Jeong
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Abstract
Provided are a semiconductor device having a gate and a method of forming the same. The method includes forming a gate dielectric, forming a first conductive material layer on the gate dielectric, forming a source material layer on the first conductive material layer, and diffusing a first element included in the source material layer into the first conductive material layer by performing a thermal treatment process to form a doped material layer.
Claims19
A method of forming a semiconductor device, comprising:
- forming a gate trench in an active region;
- forming a gate dielectric on an inner wall of the gate trench;
- forming a conductive material layer on the gate dielectric;
- forming a source material layer on the conductive material layer, the source material layer comprising a first element;
- and
- diffusing the first element into the conductive material layer to form a doped material layer having a different work function from the conductive material layer.
3 more elements
A method of forming a semiconductor device, comprising:
- forming a gate trench configured to cross an active region;
- forming a gate dielectric on an inner wall of the gate trench;
- conformally forming a first conductive material layer on the gate dielectric;
- forming a second conductive material layer in the gate trench, on the first conductive material layer;
- forming a source material layer on the first and second conductive material layers, the source material layer comprising a first element;
- diffusing the first element into the first and second conductive material layers to form first and second doped material layers, respectively, the first doped material layer having a different work function from the first conductive material layer;
- removing the source material layer formed on the doped material layer;
- and
- removing portions of the first and second doped material layers to form a gate electrode.
6 more elements
Dependencies are inferred from the claim text.