Two-terminal vertical 1t-dram and method of fabricating the same
AssigneeIndustry-University Cooperation Foundation Hanyang University
InventorsJea Gun PARK, Seung Hyun SONG, Min Won KIM
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Abstract
The present invention discloses a two-terminal vertical 1T-DRAM and a method of fabricating the same. According to one embodiment of the present invention, the two-terminal vertical 1T-DRAM includes a cathode layer formed of a first-type high-concentration semiconductor layer; a base region including a second-type low-concentration semiconductor layer formed on the cathode layer and a first-type low-concentration semiconductor layer formed on the second-type low-concentration semiconductor layer; and an anode layer formed of a second-type high-concentration semiconductor layer on the first-type low-concentration semiconductor layer.
Claims14
A two-terminal vertical 1T-DRAM, comprising:
- a cathode layer formed of a first-type high-concentration semiconductor layer;
- a base region comprising a second-type low-concentration semiconductor layer formed on the cathode layer and a first-type low-concentration semiconductor layer formed on the second-type low-concentration semiconductor layer;
- and
- an anode layer formed of a second-type high-concentration semiconductor layer on the first-type low-concentration semiconductor layer.
A method of fabricating a two-terminal vertical 1T-DRAM, comprising:
- a step of forming a cathode layer formed of a first-type high-concentration semiconductor layer;
- a step of forming a base region comprising a second-type low-concentration semiconductor layer formed on the cathode layer and a first-type low-concentration semiconductor layer formed on the second-type low-concentration semiconductor layer;
- and
- a step of forming an anode layer formed of a second-type high-concentration semiconductor layer on the first-type low-concentration semiconductor layer.
Dependencies are inferred from the claim text.