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US 2020/0027879 A1Published application
Semiconductor device, method of manufacturing the same, and electronic device including the device
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong Zhu
Life of this patent
Estimating the term…
Abstract
A semiconductor device including a first source/drain region at a lower portion thereof, a second source/drain region at an upper portion thereof, a channel region between the first source/drain region and the second source/drain region and close to peripheral surfaces thereof, and a body region inside the channel region. The semiconductor device may further include a gate stack formed around a periphery of the channel region.
Claims36
A semiconductor device, comprising:
- a substrate;
- a pillar-shaped active region extending vertically on the substrate, wherein the active region comprises a first source/drain region at a lower portion thereof, a second source/drain region at an upper portion thereof, a channel region between the first source/drain region and the second source/drain region and close to a peripheral surface thereof, and a body region inside the channel region;
- and
- a gate stack formed around a periphery of the channel region.
1 more element
A method of manufacturing a semiconductor device, comprising:
- disposing a stack of a first source/drain layer, a preliminary channel layer, and a second source/drain layer on a substrate;
- forming a mask layer in a form of grid on the stack, the mask layer comprising body portions at intersections of the grid and bridge portions between the respective body portions;
- defining, in the stack, a plurality of active regions corresponding to the respective body portions using the mask layer, wherein in each of the active regions, the preliminary channel layer has its periphery recessed with respect to those of the first source/drain layer and the second source/drain layer;
- forming, in each of the active regions, a channel layer in a recess formed by the periphery of the preliminary channel layer with respect to those of the first source/drain layer and the second source/drain layer;
- and
- forming gate stacks around peripheries of the respective channel layers.
3 more elements
Dependencies are inferred from the claim text.