Semiconductor device including a field effect transistor
AssigneeSamsung Electronics Co., Ltd.
InventorsJINYOUNG KIM, YURI MASUOKA
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes: a substrate including a first well region; a gate electrode disposed on the substrate; a semiconductor pattern disposed between the substrate and the gate electrode; a plurality of source/drain patterns disposed on the substrate and on opposing sides of the gate electrode; an impurity layer disposed in the substrate and between the semiconductor pattern and the first well region; and a barrier layer disposed in the substrate and between the semiconductor pattern and the impurity layer. The barrier layer includes oxygen.
Claims21
A semiconductor device, comprising:
- a substrate including a first well region;
- a gate electrode disposed on the substrate;
- a semiconductor pattern disposed between the substrate and the gate electrode;
- a plurality of source/drain patterns disposed on the substrate and on opposing sides of the gate electrode;
- an impurity layer disposed in the substrate and between the semiconductor pattern and the first well region;
- and
- a barrier layer disposed in the substrate and between the semiconductor pattern and the impurity layer,
- wherein the barrier layer includes oxygen.
A semiconductor device, comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a semiconductor pattern disposed between the substrate and the gate electrode;
- a plurality of source/drain patterns disposed on the substrate and on opposing sides of the gate electrode;
- an impurity layer disposed in the substrate and adjacent to the semiconductor pattern;
- and
- a barrier layer disposed in the substrate and between the semiconductor pattern and the impurity layer,
- wherein the impurity layer includes impurities having a first conductivity type,
- wherein an impurity concentration of the first conductivity type in an upper portion of the impurity layer is greater than an impurity concentration of the first conductivity type in a lower portion of the impurity layer.
18-19. (canceled)
A semiconductor device, comprising:
- a substrate;
- a plurality of gate electrodes disposed on the substrate;
- a semiconductor pattern disposed between the substrate and the gate electrodes;
- a plurality of source/drain patterns disposed on the substrate, wherein each of the plurality of source/drain patterns is disposed between a pair of gate electrodes of the plurality of gate electrodes;
- an impurity layer disposed in the substrate and including impurities having a first conductivity type;
- and
- a barrier layer disposed in the substrate and between the semiconductor pattern and the impurity layer,
- wherein the barrier layer is disposed adjacent to an upper surface of the impurity layer.
Dependencies are inferred from the claim text.