Iii-nitride material semiconductor structures on conductive silicon substrates
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsTimothy E. Boles, Wayne Mack Struble
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Abstract
III-nitride materials are described herein, including material structures comprising III-nitride material regions (e.g., gallium nitride material regions). In certain cases, the material structures also comprise substrates having relatively high electrical conductivities. Certain embodiments include one or more features that reduce the degree to which thermal runaway occurs, which can enhance device performance including at elevated flange temperatures. Some embodiments include one or more features that reduce the degree of capacitive coupling exhibited during operation. For example, in some embodiments, relatively thick III-nitride material regions and/or relatively small ohmic contacts are employed.
Claims22
A semiconductor structure for an integrated circuit component, comprising:
- a substrate, at least a portion of which is made of bulk silicon having an electronic resistivity of less than 0.10 Ω-cm when the silicon is at 25° C.;
- and
- a III-nitride material region located over the substrate.
A semiconductor structure for an integrated circuit component, comprising:
- a substrate, at least a portion of which comprises silicon having an electronic resistivity of less than 0.10 Ω-cm when the silicon is at 25° C.;
- and
- a III-nitride material region located over the substrate, wherein the integrated circuit component is configured to operate at a frequency greater than 50 MHz.
A semiconductor device, comprising:
- a substrate, at least a portion of which comprises silicon;
- a III-nitride material region having a thickness of at least 2.0 micrometers located over the substrate;
- a source electrode over the III-nitride material region, the source electrode defining a source electrode interfacial area with the III-nitride material region;
- a drain electrode over the III-nitride material region, the drain electrode defining a drain electrode interfacial area with the III-nitride material region;
- and
- a gate electrode over the III-nitride material region, the gate electrode defining a gate electrode interfacial area with the III-nitride material region;
- wherein:
- the source electrode, and the drain electrode, and the gate electrode define an active area, and
- the sum of the source electrode interfacial area, the drain electrode interfacial area, and the gate electrode interfacial area is less than 30% of the active area.
20-21. (canceled)
23-185. (canceled)
Dependencies are inferred from the claim text.