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US 2020/0027868 A1Published application
Hybrid bonding with through substrate via (tsv)
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJing-Cheng LIN
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first polymer layer formed between a first substrate and a second substrate, and a first conductive layer formed over the first polymer. The semiconductor device includes a first through substrate via (TSV) formed over the first conductive layer, and the conductive layer is in direct contact with the first TSV and the first polymer.
Claims20
A semiconductor device structure, comprising:
- a first polymer layer formed between a first substrate and a second substrate;
- a first conductive layer formed over the first polymer;
- and
- a first through substrate via (TSV) formed over the first conductive layer, wherein the conductive layer is in direct contact with the first TSV and the first polymer.
1 more element
A semiconductor device structure, comprising:
- a bonding structure formed between a first transistor and a second transistor;
- a first contact plug formed below the first transistor;
- a first through substrate via (TSV) formed adjacent to the first transistor;
- and
- a first conductive layer formed below the first TSV, wherein the first conductive layer is in direct contact with the bonding structure and the first contact plug.
2 more elements
A semiconductor device structure, comprising:
- a first transistor formed over a first substrate;
- a first conductive layer formed over the first transistor;
- a first through substrate via (TSV) formed adjacent to the first transistor;
- and
- a first conductive bonding material formed over the first conductive layer, wherein a width of the first conductive layer is greater than a width of the first conductive bonding material.
2 more elements
Dependencies are inferred from the claim text.