Wafer level integration of passive devices
AssigneeApple Inc.
InventorJun Zhai
Life of this patent
Estimating the term…
Abstract
A semiconductor device is described that includes an integrated circuit coupled to a first semiconductor substrate with a first set of passive devices (e.g., inductors) on the first substrate. A second semiconductor substrate with a second set of passive devices (e.g., capacitors) may be coupled to the first substrate. Interconnects in the substrates may allow interconnection between the substrates and the integrated circuit. The passive devices may be used to provide voltage regulation for the integrated circuit. The substrates and integrated circuit may be coupled using metallization.
Claims20
A semiconductor device, comprising:
- an integrated circuit comprising an active surface;
- a first metallization coupled to the active surface of the integrated circuit;
- a first semiconductor substrate attached to the integrated circuit with the first metallization, wherein the first semiconductor substrate comprises passive devices of a first type in the first semiconductor substrate, and wherein at least some of the capacitors are in contact with at least some of the first metallization;
- a second metallization coupled to the first semiconductor substrate;
- and
- a second semiconductor substrate attached to the first semiconductor substrate with the second metallization, wherein the second semiconductor substrate comprises passive devices of a second type in the second semiconductor substrate;
- wherein the passive devices of the first type and the passive devices of the second type are different types of passive devices.
A semiconductor device, comprising:
- an integrated circuit comprising an active surface;
- a first passive semiconductor substrate attached to the active surface of the integrated circuit with a first metallization, wherein the first passive semiconductor substrate includes passive devices of a first type;
- a second passive semiconductor substrate coupled to the first passive semiconductor substrate with a second metallization, wherein the second passive semiconductor substrate includes passive devices of a second type;
- and
- one or more pillars coupled to the active surface of the integrated circuit on a periphery of the first passive semiconductor substrate and the second passive semiconductor substrate, wherein the pillars provide input/output terminals for the integrated circuit;
- wherein the passive devices of the first type and the passive devices of the second type are different types of passive devices.
Dependencies are inferred from the claim text.