Die interconnect substrates, a semiconductor device and a method for forming a die interconnect substrate

A semiconductor device, comprising:

• a die interconnect substrate, comprising:
• a substrate structure comprising an electrically insulating substrate;
• and
• a bridge die embedded in the electrically insulating substrate of the substrate structure, the bridge die comprising a silicon substrate, wherein a portion of the electrically insulating substrate is on sidewalls of the bridge die and on a front side of the bridge die;
• a first interface structure coupled to a first bridge die pad of the front side of the bridge die, the first interface structure through the portion of the electrically insulating substrate;
• a second interface structure coupled to a second bridge die pad of the front side of the bridge die, the second interface structure through the portion of the electrically insulating substrate;
• a first substrate interconnect through the portion of the electrically insulating substrate;
• and
• a second substrate interconnect through the portion of the electrically insulating substrate;
• and
• a first die coupled to the bridge die by the first interface structure, the first die also coupled to the first substrate interconnect;
• and
• a second die coupled to the bridge die by the second interface structure, the second die also coupled to the second substrate interconnect.