Radio frequency transistor amplifiers and other multi-cell transistors having isolation structures
AssigneeCree, Inc.
InventorsFrank Trang, Qianli Mu, Haedong Jang, Zulhazmi Mokhti
Life of this patent
Estimating the term…
Abstract
A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.
Claims28
A multi-cell transistor, comprising:
- a semiconductor structure;
- a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction;
- and
- an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors,
- wherein the isolation structure comprises an isolation element that extends vertically between the first group of the unit cell transistors and the second group of the unit cell transistors and is configured to reduce a mutual coupling between the first group of the unit cell transistors and the second group of the unit cell transistors.
(canceled)
6-7. (canceled)
9-10. (canceled)
A multi-cell transistor, comprising:
- a semiconductor structure;
- a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction;
- an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors;
- an input bond wire electrically connected to a gate of a first unit cell transistor of the plurality of unit cell transistors;
- an output bond wire electrically connected to a drain of the first unit cell transistor;
- and
- a secondary isolation material between the input bond wire and the output bond wire.
(canceled)
A multi-cell transistor, comprising:
- a semiconductor structure;
- a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor including a gate finger that extends in a first direction on a top surface of the semiconductor structure, the gate fingers spaced apart from each other along a second direction and arranged on the top surface of the semiconductor structure in a plurality of groups;
- and
- an isolation structure on the top surface of the semiconductor structure between a first group and second group of the plurality of groups,
- wherein the isolation structure is electrically connected to a ground signal.
(canceled)
21-23. (canceled)
25-26. (canceled)
A transistor device, comprising:
- a multi-cell transistor, comprising:
- a plurality of unit cell transistors that are electrically connected in parallel and that are spaced apart along a second direction;
- and
- a first isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and extends in a first direction;
- an input bond wire electrically connected to a gate of a first unit cell transistor of the plurality of unit cell transistors;
- an output bond wire electrically connected to a drain of the first unit cell transistor;
- and
- a second isolation structure extending in the second direction between the input bond wire and the output bond wire.
31-33. (canceled)
35-36. (canceled)
Dependencies are inferred from the claim text.