Wire bonding between isolation capacitors for multichip modules

An electronic device, comprising:

• a first integrated circuit (IC) die on a first die pad, said first IC die including a first top metal layer;
• a second IC die on a second die pad, said second IC die including a second top metal layer;
• a bond wire connected between the first top metal layer and the second top metal layer,
• wherein the bond wire at a first end forms a first angle with the first top metal layer of about 90 degrees;
• and
• wherein the bond wire at a second end forms an acute second angle θ with the second top metal layer of no less than 25 degrees and no more than 50 degrees.

A method of forming an electronic device, comprising:

• connecting a bond wire to a first top metal layer of a first integrated circuit (IC) die;
• and
• connecting the bond wire to a second top metal layer of a second IC die,
• wherein the bond wire at a first end forms a first angle with the first top metal layer of about 90 degrees, and
• wherein the bond wire at a second end forms a second angle θ with the second top metal layer of no less than 25 degrees and no more than 50 degrees.