Device structure and techniques for forming semiconductor device having angled conductors
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsSony Varghese, Anthony Renau, Morgan Evans, John Hautala, Joe Olson, Min Gyu Sung
Life of this patent
Estimating the term…
Abstract
A method of forming a device may include forming a component in a first level of a device structure; forming a contact cavity overlapping the component, the contact cavity forming a non-zero angle of inclination with respect to a perpendicular to a substrate plane. The method may further include filling the contact cavity with a conductor, wherein an angled conductor is formed, wherein the angled conductor extends to a second level of the device structure.
Claims17
A method of forming a device, comprising:
- forming a component in a first level of a device structure;
- forming a contact cavity overlapping the component, the contact cavity forming a non-zero angle of inclination with respect to a perpendicular to a substrate plane;
- and
- filling the contact cavity with a conductor, wherein an angled conductor is formed, wherein the angled conductor extends to a second level of the device structure.
A multi-level device, comprising:
- a first component, disposed at least partially in a first level;
- a second component, disposed at least partially in a second level, above the first level, wherein the first level and the second level are parallel to a substrate plane;
- and
- an angled conductor, the angled conductor extending between the first component and the second component, and defining a non-zero angle of inclination with respect to a perpendicular to the substrate plane.
A method of fabricating a multi-level semiconductor device, comprising:
- forming an active device region in a first level of the semiconductor device;
- forming a set of conductor lines in an intermediate level of the semiconductor device, above the first level;
- forming an angled conductor in contact with the active device region, the angled conductor forming a non-zero angle of inclination with respect to a perpendicular to a substrate plane of the semiconductor device, wherein the angled conductor does not contact the set of conductor lines;
- and
- forming an upper component in an upper level of the multi-level semiconductor device, above the intermediate level, wherein the angled conductor contacts the upper component.
Dependencies are inferred from the claim text.