Finfet fuses formed at tight pitch dimensions
AssigneeInternational Business Machines Corporation
InventorsAlexander Reznicek, Oscar van der Straten, Praneet Adusumilli, Bahman Hekmatshoartabari
Life of this patent
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Abstract
A semiconductor structure is provided in which metal semiconductor alloy pillars are formed at least partially within the sidewall surfaces of each semiconductor fin that extends from a surface of a substrate. These pillars are fuses (i.e., FinFET fuses) that are formed at a very tight pitch dimensions. The pillars can be trimmed after forming FinFET devices. The present application provides a method for forming on-chip FinFET fuses easily by choice of the metal semiconductor alloy, the amount of pillar trim, the number of contacted pillars and to a lower design degree the height of each pillar.
Claims20
A method of forming a semiconductor structure, the method comprising:
- forming at least one semiconductor fin extending upward from a semiconductor substrate, wherein the at least one semiconductor fin has a hard mask cap located on a surface thereof;
- forming an isolation layer on a physically exposed surface of the semiconductor substrate and contacting opposing sidewall surfaces of a lower portion of the at least one semiconductor fin;
- forming a metal semiconductor alloy pillar within a portion of each of the opposing sidewall surfaces of the at least one semiconductor fin, wherein a semiconductor fin portion remains between each metal semiconductor alloy pillar;
- removing both the hard mask cap and the semiconductor fin portion;
- forming a sacrificial gate structure and a gate spacer on each metal semiconductor alloy pillar;
- forming an interlayer dielectric material layer laterally surrounding the gate spacer;
- removing the sacrificial gate structure to provide a cavity that physically exposes a portion of each metal semiconductor alloy pillar;
- and
- trimming the physically exposed portion of each metal semiconductor alloy pillar to provide a pair of spaced apart fuses, each fuse having a first end portion and a second end portion having a first thickness, and a middle portion located between the first and second end portions and having a second thickness that is less than the first thickness.
Dependencies are inferred from the claim text.