Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMark VAN DAL, Gerben DOORNBOS
Life of this patent
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Abstract
In a method of manufacturing a semiconductor device, a fin structure having a bottom portion, an intermediate portion disposed over the bottom portion and an upper portion disposed over the intermediate portion is formed. The intermediate portion is removed at a source/drain region of the fin structure, thereby forming a space between the bottom portion and the upper portion. An insulating layer is formed in the space. A source/drain contact layer is formed over the upper portion. The source/drain contact layer is separated by the insulating layer from the bottom portion of the fin structure.
Claims20
A semiconductor device, comprising:
- semiconductor wire structures vertically arranged, each having a channel region and a source/drain region, wherein:
- a source/drain contact layer is formed over and in electrically contact with the source/drain region,
- the source/drain contact layer is embedded in an dielectric layer,
- an isolation insulating layer is disposed between the dielectric layer and a substrate, and
- a bottom of the source/drain contact layer is separated from the substrate by an insulating layer made of a different material than the isolation insulating layer and the dielectric layer.
A semiconductor device, comprising:
- a first semiconductor wire structure including first semiconductor wires vertically arranged, each having a channel region and a source/drain region;
- and
- a second semiconductor wire structure including second semiconductor wires vertically arranged, each having a channel region and a source/drain region, wherein:
- the first semiconductor wire structure is horizontally adjacent to the second semiconductor wire structure,
- a source/drain contact layer is formed over and in electrically contact with the source/drain region of the first semiconductor wires and the source/drain region of the second semiconductor wires,
- the source/drain contact layer is embedded in a dielectric layer,
- an isolation insulating layer is disposed between the dielectric layer and a substrate, and
- a bottom of the source/drain contact is separated from the substrate by an insulating layer made of a different material than the isolation insulating layer and the dielectric layer.
A semiconductor device, comprising:
- semiconductor wires vertically arranged, each of which has a channel region and a source/drain region, wherein:
- a source/drain contact layer is formed over and in electrically contact with the source/drain region wrapping around the semiconductor wires,
- the source/drain contact layer is embedded in an dielectric layer,
- an isolation insulating layer is disposed between the dielectric layer and a substrate, and
- a bottom of the source/drain region of a bottommost semiconductor wire is separated from the substrate by an insulating layer made of a different material than the isolation insulating layer and the dielectric layer.
Dependencies are inferred from the claim text.