Back to results
US 2020/0027750 A1Published application
Semiconductor Device and Method of Manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Hsin Wei, Hsien-Pin Hu, Shang-Yun Hou, Chi-Hsi Wu, Chen-Hua Yu, Wen-Jung Chuang, Chun-Che Chen, Jhih-Ming Lin, Chih-Ching Lin, Shih-Wen Huang, Chun Hua Chang, Tsung-Yang Hsieh
Life of this patent
Estimating the term…
Abstract
An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.
Claims20
A semiconductor device comprising:
- a contact pad over a first dielectric layer over an interposer substrate;
- and
- a passivation layer over a first portion of the first dielectric layer, wherein a sidewall of the passivation layer is aligned with a first sidewall of the first dielectric layer and wherein the first dielectric layer has a second sidewall facing the first sidewall, the second sidewall being misaligned from the passivation layer.
A semiconductor device comprising:
- a first dielectric layer over an interposer substrate, the first dielectric layer having a first sidewall and a second sidewall facing the first sidewall;
- a second dielectric layer having a third sidewall aligned with the first sidewall and a fourth sidewall aligned with the second sidewall;
- and
- a passivation layer with a fifth sidewall aligned with the second sidewall and the fourth sidewall, wherein the first sidewall is misaligned from the passivation layer.
1 more element
A semiconductor device comprising:
- an interposer substrate;
- a redistribution layer over the interposer substrate;
- a first dielectric layer over the redistribution layer;
- a second dielectric layer over the first dielectric layer;
- contact pads located over the second dielectric layer;
- and
- a passivation layer over the contact pads, wherein the first dielectric layer has a first sidewall aligned with a second sidewall of the second dielectric layer, and wherein the first dielectric layer has a third sidewall aligned with a fourth sidewall of the second dielectric layer, wherein a distance between the first sidewall to the second sidewall is larger than an exposure limit of an exposure mask.
4 more elements
Dependencies are inferred from the claim text.