Control of current collapse in thin patterned gan
AssigneesInternational Business Machines Corporation, Massachusetts Institute of Technology
InventorsWilliam J. Gallagher, Marinus Johannes Petrus Hopstaken, Ko-Tao Lee, Tomas Palacios, Daniel Piedra, Devendra K. Sadana
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Abstract
A GaN device is formed on a semiconductor substrate having a plurality of recessed regions formed in a surface thereof. A seed layer, optional buffer layer, and gallium nitride layer such as a carbon-doped gallium nitride layer are successively deposited within the recessed regions. Improved current collapse response of the GaN device is attributed to maximum length and width dimensions of the multilayer stack.
Claims18
A method of improving current collapse in a gallium nitride high electron mobility transistor, comprising:
- forming a recessed region in a surface of a substrate comprising a semiconductor material, wherein the recessed region exposes a first vertical sidewall of the substrate, a second vertical sidewall of the substrate, and a horizontal surface of the semiconductor material of the substrate;
- forming a seed layer within the recessed region and directly on the horizontal surface of the semiconductor material of the substrate, wherein the seed layer extends continuously from the first vertical sidewall to the second vertical sidewall;
- and
- forming a layered structure over the seed layer, the layered structure comprising at least a gallium nitride layer, wherein the gallium nitride layer is formed directly on the seed layer and extends continuously from, and is in direct contact with, the first vertical sidewall and the second vertical sidewall.
-9. (canceled)
(canceled)
A method of improving current collapse in a gallium nitride high electron mobility transistor, comprising:
- forming a recessed region in a surface of a substrate comprising a semiconductor material, wherein the recessed region exposes a first vertical sidewall of the substrate, a second vertical sidewall of the substrate, and a horizontal surface of the semiconductor material of the substrate;
- forming a seed layer within the recessed region and directly on the horizontal surface of the semiconductor material of the substrate, wherein the seed layer extends continuously from the first vertical sidewall to the second vertical sidewalk, and
- forming a layered structure over the seed layer, the layered structure comprising at least a gallium nitride layer and a buffer layer, wherein the buffer layer is located directly on the seed layer and extends continuously from, and is in direct contact with, the first vertical sidewall and the second vertical sidewall, and the gallium nitride layer is located directly on the buffer layer and extends continuously from, and is in direct contact with, the first vertical sidewall and the second vertical sidewall.
-20. (canceled)
Dependencies are inferred from the claim text.