Led wafer processing method
AssigneeDisco Corporation
InventorMakiko OHMAE
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Abstract
An LED wafer is formed from a sapphire substrate having a front side. A plurality of crossing division lines are formed on the front side of the sapphire substrate to thereby define a plurality of separate regions where a plurality of LEDs are respectively formed. An LED wafer processing method includes preparing a V-blade having an annular cutting edge whose outer circumferential portion has a V-shaped cross section, rotatably mounting the V-blade in a cutting unit, holding the LED wafer on a holding table with the back side of the LED wafer exposed upward, and then relatively moving the cutting unit and the holding table to form a chamfered portion on the back side of the LED wafer along an area corresponding to each division line formed on the front side of the LED wafer.
Claims7
A light-emitting diode wafer processing method for processing a light-emitting diode wafer formed from a sapphire substrate having a front side, a plurality of crossing division lines being formed on the front side of the sapphire substrate to thereby define a plurality of separate regions where a plurality of light-emitting diodes are respectively formed, the light-emitting diode wafer processing method comprising:
- a V-blade preparing step of preparing a V-blade having an annular cutting edge whose outer circumferential portion has a V-shaped cross section;
- and
- a chamfering step of rotatably mounting the V-blade in cutting means, holding the light-emitting diode wafer on a holding table in a condition where a back side of the light-emitting diode wafer is exposed upward, and then relatively moving the cutting means and the holding table to form a chamfered portion on the back side of the light-emitting diode wafer along an area corresponding to each division line formed on the front side of the light-emitting diode wafer.
Dependencies are inferred from the claim text.