Semiconductor structure and method for forming same

Abstract

A semiconductor structure and a method for forming same are provided. The forming method includes: providing a base; forming a core layer on the base; forming sacrificial spacers on sidewalls of the core layer, the sacrificial spacer located on one side of the core layer being a first sacrificial spacer, the sacrificial spacer located on the other side of the core layer being a second sacrificial spacer; forming a first mask spacer on a sidewall of the first sacrificial spacer; removing the core layer, and forming an opening in the sacrificial spacers; forming a second mask spacer on a sidewall of the second sacrificial spacer exposed by the opening; removing the sacrificial spacers; and etching the base using the first mask spacer and the second mask spacer as masks to form a target pattern. The present disclosure reduces the process difficulty of a photolithography process, improves operability of the process, and also helps ensure that the shape and size of the target pattern can meet process requirements, so that device performance and performance uniformity can be improved.

Dependencies are inferred from the claim text.