Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHui-jung KIM, Kiseok LEE, Keunnam KIM, Yoosang HWANG
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Abstract
Disclosed are semiconductor devices and methods of manufacturing the same. The method comprises alternately stacking a plurality of dielectric layers and a plurality of first semiconductor layers to form a mold structure on a substrate, forming a hole penetrating the mold structure, forming on the substrate a second semiconductor layer filling the hole, and irradiating a laser onto the second semiconductor layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- alternately stacking a plurality of dielectric layers and a plurality of first semiconductor layers to form a mold structure on a substrate;
- forming a hole penetrating the mold structure;
- forming on the substrate a second semiconductor layer filling the hole;
- and
- irradiating a laser onto the second semiconductor layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming on a substrate a mold structure including a dielectric layer and a first semiconductor layer;
- forming a hole penetrating the mold structure;
- forming on the substrate a second semiconductor layer filling the hole;
- and
- irradiating a laser onto the second semiconductor layer,
- wherein forming the hole comprises exposing a top surface of the substrate.
A method of manufacturing a semiconductor device, the method comprising:
- stacking a plurality of dielectric layers and a plurality of first semiconductor layers to form a mold structure on a substrate;
- forming a hole penetrating the mold structure, wherein forming the hole comprises
- forming a sidewall of the mold structure, the sidewall being defined by the hole, and
- forming a semiconductor pattern on each of the first semiconductor layers, the semiconductor pattern extending in a first direction;
- forming on the substrate a second semiconductor layer filling the hole;
- irradiating a laser onto the second semiconductor layer;
- forming a first conductive line on the sidewall of the mold structure;
- forming on the semiconductor pattern a second conductive line that extends in a second direction intersecting the first direction;
- and
- forming a data storage element connected to the semiconductor pattern.
Dependencies are inferred from the claim text.