Method for manufacturing silicon single crystal, flow straightening member, and single crystal pulling device

A manufacturing method of monocrystalline silicon using a monocrystal pull-up apparatus, the monocrystal pull-up apparatus comprising:

• a crucible;
• a crucible driver configured to raise, lower and rotate the crucible;
• a heater configured to heat the crucible to generate a dopant-added melt in which a dopant is added to a silicon melt;
• a pull-up portion configured to bring a seed crystal into contact with the dopant-added melt and subsequently pull up the seed crystal to grow monocrystalline silicon;
• a cylindrical heat shield provided above the crucible, surrounding the monocrystalline silicon;
• a chamber housing the crucible, the heater and the heat shield;
• and
• an intake provided on an upper side of the chamber and configured to introduce inert gas into the chamber,
• the manufacturing method comprising:
• disposing a flow regulator under the heat shield, the flow regulator comprising an annular plate body surrounding the monocrystalline silicon;
• during growth of the monocrystalline silicon, simultaneously,
• controlling an internal pressure of the chamber to 20 kPa or more;
• keeping the flow regulator spaced from the dopant-added melt;
• and
• introducing the inert gas from above to between the monocrystalline silicon and the heat shield to divide the inert gas into a first flow gas flowing along a first flow path between the heat shield and the flow regulator to be away from the monocrystalline silicon and a second flow gas flowing along a second flow path between the flow regulator and a surface of the dopant-added melt to be away from the monocrystalline silicon.