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US 2020/0027731 A1Published application
Film forming method and manufacturing method of semiconductor device
AssigneesToyota Jidosha Kabushiki Kaisha, National University Corporation Kyoto Institute of Technology
InventorsTatsuji NAGAOKA, Hiroyuki NISHINAKA, Masahiro YOSHIMOTO
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Abstract
A film forming method of forming a gallium oxide film doped with tin on a substrate is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein a gallium compound and a tin chloride (IV) pentahydrate are dissolved in the solution.
Claims17
A film forming method of forming a gallium oxide film doped with tin on a substrate, the film forming method comprising:
- supplying mist of a solution to a surface of the substrate while heating the substrate, wherein a gallium compound and a tin(IV) chloride pentahydrate are dissolved in the solution.
Dependencies are inferred from the claim text.