Film forming method and method of manufacturing semiconductor device
AssigneesToyota Jidosha Kabushiki Kaisha, National University Corporation Kyoto Institute of Technology
InventorsTatsuji NAGAOKA, Hiroyuki NISHINAKA, Masahiro YOSHIMOTO
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Abstract
A film forming method of forming an oxide film on a substrate, wherein the oxide film has germanium doped therein and comprises a property of a conductor or a semiconductor, is disclosed herein. The film forming method may include supplying mist of a solution to a surface of the substrate while heating the substrate, wherein an oxide film material including a constituent element of the oxide film and an organic germanium compound may be dissolved in the solution.
Claims22
A film forming method of forming an oxide film on a substrate, wherein the oxide film has germanium doped therein and comprises a property of a conductor or a semiconductor, the film forming method comprising:
- supplying mist of a solution to a surface of the substrate while heating the substrate, wherein an oxide film material comprising a constituent element of the oxide film and an organic germanium compound are dissolved in the solution.
Dependencies are inferred from the claim text.