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AssigneesHefei Xinsheng Optoelectronics Technology Co., Ltd., Boe Technology Group Co., Ltd.
InventorsTongshang Su, Dongfang Wang, Jun Liu, Qinghe Wang, Wuxia Fu, Liangchen Yan, Guangcai Yuan
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The present disclosure provides an oxide semiconductor layer and a preparation method thereof, device, substrate, and means, and belongs to the field of semiconductor technologies. The method includes: forming an oxide semiconductor layer having multiply types of regions on a substrate, at least two types of the multiple types of regions having different thicknesses, and adjusting an oxygen content of at least one type of regions in the multiply types of regions, so that the oxygen content and the thickness in the multiple types of regions are positively correlated.
A method for preparing an oxide semiconductor layer, comprising:
A device for preparing an oxide semiconductor layer, comprising:
An oxide semiconductor layer, wherein the oxide semiconductor layer has multiple types of regions, at least two types of the multiple types of regions have different thicknesses, and oxygen content and thickness in the multiple types of regions are positively correlated.
Dependencies are inferred from the claim text.