Low Temperature High-Quality Dielectric Films
AssigneeApplied Materials, Inc.
InventorsEswaranand Venkatasubramanian, Samuel E. Gottheim, Pramit Manna, Abhijit Basu Mallick
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Abstract
Techniques for deposition of high-density dielectric films for patterning applications are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.1 mTorr and about 10 Torr. A plasma is generated at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate. The dielectric film has a refractive index in a range of about 1.5 to about 3.
Claims20
A method of processing a substrate, the method comprising:
- flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate positioned on an electrostatic chuck,
- maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about −50° C. to about 150° C.;
- and
- generating a plasma at a substrate level by applying a first RF bias to the electrostatic chuck to deposit a dielectric film on the substrate, the dielectric film having a refractive index in a range of about 1.5 to about 3.
A method of processing a substrate, the method comprising:
- flowing a precursor-containing gas mixture into a processing volume of a processing chamber having as substrate positioned on an electrostatic chuck, wherein the precursor-containing gas mixture comprises one or more precursor selected from silane (SiH4), triethoxysilane (SiH(OEt)3), tetraethoxysilane (tetraethyl orthosilicate;
- Si(OEt)4 or TEOS), disilane (Si2H6), SiH(CH3)3, dimethylsilane (SiH2(CH3)2), methylsilane (SiH3CH3), dichlorosilane (SiH2Cl2), silicon tetrachloride (SiCl4), silicon tetrafluoride (SiF4), trichlorosilane (HSiCl3), methylsilane (CH3SiH3), trimethylsilane (C3H10Si), 1,1,3,3-tetramethyldisiloxane (TMDZ), 1,3,5-trisilapentane (TSP), (bis(tertiarybutylamino)silane (BTBAS), (bis(diethylamino)silane (BDEAS), tris(dimethylamino)silane (TDMAS), (Si[N(tBu)CH═CHN(tBu)](OEt)2 (Si-TBES), Si[N(tBu)CH═CHN(tBu)](H)NH2 (Si-TBAS), germane (GeH4), germanium tetrachloride (GeCl4), germanium tetrafluoride (GeF4), t-butylgermane (GeH(CH3)3), N2O, O2, NH3, N2, H2, C2H2, or C3H6;
- maintaining the substrate at a pressure in a range of about 0.1 mTorr to about 10 Torr;
- and
- generating a plasma at a substrate level by applying a first RF bias and a second RF bias to the electrostatic chuck to deposit a dielectric film on the substrate, the dielectric film having a refractive index in a range of about 1.5 to about 3.
A method of processing a substrate, the comprising:
- flowing a precursor-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck;
- maintaining the processing volume at a pressure in a range of about 0.1 mTorr to about 10 Torr;
- generating a plasma at a substrate level by applying a first RF bias and a second RF bias to the electrostatic chuck to deposit a dielectric film on the substrate, the dielectric film having a refractive index in a range of about 1.5 to about 3;
- forming a patterned photoresist layer over the dielectric film;
- etching the dielectric film in a pattern corresponding with the patterned photoresist layer to provide etched portions of the dielectric film;
- etching the pattern into the substrate;
- and
- depositing a material into the etched portions of the dielectric film.
Dependencies are inferred from the claim text.