Method for doping layer, thin film transistor and method for fabricating the same

A method for fabricating a thin film transistor, comprising forming a gate, a source, a drain, and a semiconductor active layer, wherein forming the semiconductor active layer comprises:

• forming a semiconductor layer on the substrate by a first patterning process, wherein the semiconductor layer comprises a first region, a second region and a third region, the first region is arranged in a middle region of the semiconductor layer, the third region is arranged in an edge region of the semiconductor layer, and the second region is arranged between the first region and the third region;
• forming a first blocking layer and a second blocking layer for blocking an ion beam on the semiconductor layer in this order by a second patterning process, wherein an orthographic projection region of the first blocking layer on the semiconductor layer exactly covers the first region, and an orthographic projection region of the second blocking layer on the semiconductor layer exactly covers the first region and the second region;
• performing a first doping on the semiconductor layer with an ion beam perpendicular to the substrate;
• and
• rotating the substrate by a preset angle in a direction parallel to the ion beam, so that the second blocking layer does not shield the second region, and performing a second doping on the semiconductor layer with the ion beam, to form a semiconductor active layer.