Minimization of Carbon Loss in ALD SiO2 Deposition on Hardmask Films
AssigneeLam Research Corporation
InventorsDouglas Walter Agnew, Ishtak Karim
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Abstract
A method for defining thin film layers on a surface of a substrate includes exposing the surface of the substrate to a first precursor via a first plasma to allow the first precursor to be absorbed by the surface of the substrate. A second precursor that is different from the first precursor is applied to the surface of the substrate via a second plasma. The second precursor is a Carbon dioxide precursor that releases sufficient oxygen radicals to react with the first precursor to form an oxide film layer on the surface of the substrate.
Claims16
A method for processing a substrate in a process chamber, the substrate having an initial pattern of spin-on-hardmask (SOH) defined on a surface of the substrate, the method comprising:
- exposing the surface of the substrate with the initial pattern of spin-on-hardmask (SOH) to a sequential operation for a defined number of times to form an oxide film layer of a thickness;
- directionally etching the oxide film layer to expose a top of the SOH of the initial pattern and the surface of the substrate;
- and
- performing an ashing operation to remove the SOH of the initial pattern to leave oxide sidewalls, the oxide sidewalls defining a self-aligned double pattern.
Dependencies are inferred from the claim text.