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US 2020/0027716 A1Published application
Method of Manufacturing an Insulation Layer on Silicon Carbide and Semiconductor Device
AssigneeZF Friedrichshafen AG
InventorYuji Komatsu
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Abstract
A method of manufacturing an insulation layer on a silicon carbide substrate, the method including preparing a surface of a silicon carbide substrate, forming a first part of an insulation layer on the surface of the silicon carbide substrate at a temperature below 400° Celsius, and forming a second part of the insulation layer by depositing a dielectric film on the first part of the insulation layer.
Claims12
1-11. (canceled)
A method of manufacturing an insulation layer on a silicon carbide substrate, the method comprising:
- preparing a surface of a silicon carbide substrate;
- forming a first part of an insulation layer on the surface of the silicon carbide substrate at a temperature below 400° Celsius;
- and
- forming a second part of the insulation layer by depositing a dielectric film on the first part of the insulation layer.
1 more element
A semiconductor device, comprising:
- a silicon carbide substrate, and
- an insulation layer formed at least partly on the silicon carbide substrate, the insulation layer comprising a silicon oxide layer and a dielectric layer deposited on the silicon oxide layer,
- wherein the silicon oxide layer has a thickness between 0.5 nanometers and 10 nanometers.
Dependencies are inferred from the claim text.