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US 2020/0027697 A1Published application
Ion implantation method and ion implanter
AssigneeSumitomo Heavy Industries Ion Technology Co., Ltd.
InventorsYoji Kawasaki, Haruka Sasaki
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Abstract
An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.
Claims16
An ion implantation method comprising:
- irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied;
- and
- irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.
An ion implantation method comprising:
- heating or cooling a wafer to a predetermined temperature using a temperature adjustment device;
- irradiating the wafer having the predetermined temperature with an ion beam such that a predetermined channeling condition is satisfied;
- forming, compared to an implantation profile formed in the wafer when the wafer is irradiated with an ion beam such that the predetermined channeling condition is satisfied at a temperature different from the predetermined temperature, a different implantation profile in the wafer in at least one of a depth direction and an in-plane direction perpendicular to the depth direction.
An ion implanter comprising:
- a beamline device configured to transport an ion beam;
- a wafer holding device configured to hold a wafer to be irradiated with the ion beam;
- and
- a temperature adjustment device configured to heat or cool the wafer,
- wherein the wafer is heated or cooled to a predetermined temperature using the temperature adjustment device, the wafer is held by the wafer holding device such that a predetermined channeling condition is satisfied, and the wafer having the predetermined temperature which is held by the wafer holding device is irradiated with the ion beam.
2 more elements
Dependencies are inferred from the claim text.