Enabling High Throughput Electron Channeling Contrast Imaging (ECCI) by Varying Electron Beam Energy
AssigneeInternational Business Machines Corporation
InventorsBrent A. Wacaser, Devendra K. Sadana, Stephen W. Bedell
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Abstract
Techniques for high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy are provided. In one aspect, a method for ECCI of a crystalline wafer includes: placing the crystalline wafer under an electron microscope having an angle of less than 90° relative to a surface of the crystalline wafer; generating an electron beam, by the electron microscope, incident on the crystalline wafer; varying an accelerating voltage of the electron microscope to access a channeling condition of the crystalline wafer; and obtaining an image of the crystalline wafer. A system for ECCI is also provided.
Claims21
A method for electron channeling contrast imaging (ECCI) of a crystalline wafer, the method comprising the steps of:
- placing the crystalline wafer under an electron microscope having an angle of less than 90° relative to a surface of the crystalline wafer;
- generating an electron beam, by the electron microscope, incident on the crystalline wafer;
- varying an accelerating voltage of the electron microscope to access a channeling condition of the crystalline wafer;
- and
- obtaining an image of the crystalline wafer.
A system for BCCI, comprising:
- a stage;
- and
- an electron microscope positioned over the stage, the electron microscope having an angle of less than 90° relative to a surface of the stage.
Dependencies are inferred from the claim text.