Substrate processing method
AssigneeASM IP Holding B.V.
InventorsYuko KENGOYAMA, Takashi YOSHIDA
Life of this patent
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Abstract
Examples of a substrate processing method include subjecting a substrate placed on a susceptor to plasma processing, applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to generate plasma, thereby reducing an amount of charge of the substrate, measuring a self-bias voltage of the RF electrode while susceptor pins are made to protrude from a top surface of the susceptor and lift up the substrate, and by a controller, shortening the static electricity removal time when the self-bias voltage has a positive value, and lengthening the static electricity removal time when the self-bias voltage has a negative value.
Claims10
A substrate processing method comprising:
- subjecting a substrate placed on a susceptor to plasma processing;
- applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to generate plasma, thereby reducing an amount of charge of the substrate;
- measuring a self-bias voltage of the RF electrode while susceptor pins are made to protrude from a top surface of the susceptor and lift up the substrate;
- and
- by a controller, shortening the static electricity removal time when the self-bias voltage has a positive value, and lengthening the static electricity removal time when the self-bias voltage has a negative value.
A substrate processing method comprising:
- repeating, at a plurality of times, subjecting a first substrate placed on a susceptor to plasma processing, applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to reduce an amount of charge of the first substrate, and measuring a self-bias voltage of the RF electrode when susceptor pins are made to protrude from a top surface of the susceptor and lift up the first substrate while the static electricity removal time is changed;
- subjecting a second substrate placed on the susceptor to the same plasma processing as the plasma processing for the first substrate;
- and
- applying power to the RF electrode for only a static electricity removal time which provides a self-bias voltage having a minimum absolute value among the self-bias voltages obtained by measuring the self-bias voltage at the plurality of times, thereby reducing an amount of charge of the second substrate.
Dependencies are inferred from the claim text.