Back to results
US 2020/0027507 A1Published application
Operating method of resistive memory storage apparatus
AssigneeWinbond Electronics Corp.
InventorsLih-Wei Lin, Ju-Chieh Cheng, Tsung-Huan Tsai, I-Hsien Tseng
Life of this patent
Estimating the term…
Abstract
An operating method of a resistive memory storage apparatus includes: applying a forming voltage to a memory cell and obtaining a cell current of the memory cell; and determining whether to adjust the forming voltage and apply the adjusted forming voltage to the memory cell according to a magnitude relationship between the cell current and a reference current. The memory cell to which the forming voltage is applied operates in a heavy forming mode and serves as a one-time programmable memory device.
Claims10
An operating method of a resistive memory storage apparatus, comprising:
- applying a forming voltage to a memory cell and obtaining a first cell current of the memory cell;
- and
- determining whether to adjust the forming voltage and apply the adjusted forming voltage to the memory cell according to a magnitude relationship between the first cell current and a first reference current, wherein the memory cell to which the forming voltage is applied operates in a heavy forming mode and serves as a one-time programmable memory device.
Dependencies are inferred from the claim text.